BU2722AF datasheet(1/7 Pages) PHILIPS

부품명	BU2722AF

상세설명	Silicon Diffused Power Transistor

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2722AF

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

horizontal deflection circuits of high resolution monitors. Designed to withstand V

CES pulses up to 1700 V.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1700

V

CEO

Collector-emitter voltage (open base)

-

825

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

P

tot

Total power dissipation

T

hs ≤ 25 ˚C

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

C = 4.5 A; IB = 1.0 A

-

1.0

V

I

Csat

Collector saturation current

f = 64 kHz

4.5

-

A

t

s

Storage time

I

Csat = 4.5 A; f = 64 kHz

2.9

3.5

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1700

V

CEO

Collector-emitter voltage (open base)

-

825

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

I

B

Base current (DC)

-

10

A

I

BM

Base current peak value

-

14

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

150

mA

-I

BM

Reverse base current peak value

1

-6

A

P

tot

Total power dissipation

T

hs ≤

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

ESD LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor voltage Human body model (250 pF,

-

10

kV

1.5 k

Ω)

12

3

case

b

c

e

1 Turn-off current.

September 1997

1

Rev 1.200

유사한 부품 번호 - BU2722AF

제조업체	부품명	데이터시트	상세설명
Savantic, Inc.	BU2722AF	117Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	BU2722AF	85Kb / 3P	Silicon Power Transistors
Inchange Semiconductor ...	BU2722AF	134Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BU2722AF	118Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	BU2722AF_2015	85Kb / 3P	Silicon Power Transistors

More results

유사한 설명 - BU2722AF

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	BU1706A	76Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.000
	BU1706AB	83Kb / 7P	Silicon Diffused Power Transistor February 1998 Rev 1.000
	BU2506DF	66Kb / 7P	Silicon Diffused Power Transistor September 1997 Rev 1.400
	BU2507AX	55Kb / 6P	Silicon Diffused Power Transistor eptember 1997 Rev 1.100
Wing Shing Computer Com...	2SD1577	138Kb / 1P	Silicon Diffused Power Transistor
Wing Shing Computer Com...	S2005A	95Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR
NXP Semiconductors	BU2508DF	71Kb / 7P	Silicon Diffused Power Transistor July 1998-Rev 1.600
	BUJ100B	65Kb / 8P	Silicon Diffused Power Transistor May 2001-Rev 1.000
	BUJ105AD	88Kb / 12P	Silicon diffused power transistor Rev. 01-14 December 2004
	BUJ403A127	125Kb / 9P	Silicon Diffused Power Transistor December 1998

More results

BU2722AF 데이터시트(PDF) 1 Page - NXP Semiconductors

BU2722AF 데이터시트(HTML) 1 Page - NXP Semiconductors

유사한 부품 번호 - BU2722AF

유사한 설명 - BU2722AF

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