MSC080SMA120B4

Device Specifications

© 2023 Microchip Technology Inc.

and its subsidiaries

Data Sheet

DS00004673B-page 4

...........continued

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

ISD = 20 A, VDD = 850 V, VGS =

–5 V, dl/dt = –1000 A/μs, Drive

Rg = 8 Ω

12

ns

Qrr

Reverse recovery charge

416

nC

IRRM

Reverse recovery current

59

A

1.3

Typical Performance Curves

This section shows the typical performance curves of the MSC080SMA120B4 device.

Figure 1-1. Drain Current vs. VDS at TJ

Figure 1-2. Drain Current vs. VDS at VGS

Figure 1-3. Drain Current vs. VDS at VGS

Figure 1-4. Drain Current vs. VDS at VGS