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FJB3307D 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 FJB3307D
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
FJB3307D
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO= 400V(Min.)
·
High Reliability
·
Low Collector Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High ruggedness electronic ignitions
·
High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.56
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter peak Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Pulse
16
A
IB
Base Current-Continuous
4
A
PT
Total Power Dissipation @TC=25℃
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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