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EIA-364,TP-21

Dielectric Withstanding

Voltage

No creeping discharge nor

Flashover shall occur.

Current leakage:

1 mA Max.

500 V for 1 minute. Test between adjacent

circuit.

EIA-364,TP-20

Temperature Rise

30 °C Max. under loaded

rating current

The contacts shall be wired in series and apply

rated current. Measure the temp. rising on

contact.

MECHANICAL

Item

Requirement

Test Condition

Durability

(Office Environment)

100 mΩ Maximum (Initial)

△R=40mΩMax.

Cycle Rate: 400 to 600 cycles per hour. No. of

Cycles: 10,000 cycles.

EIA- 364,TP-09

Durability

(Harsh Environment)

100 mΩ Maximum (Initial)

△R=40mΩMax.

Cycle Rate: 400 to 600 cycles per hour.

1. Mate/Unmating : 1,000 cycles

2. Dump Heat 1 cycles

3. Mate/Unmating: 1,000 cycles

4. Dump Heat : 1 cycles

5. Mate/Unmating : 3,000 cycles

6. Dump Heat 1 cycles

7. H2S 96 hours

Contact Retention Force

1.0N Min.

(Individual Contact)

Measure the contact retention force at 25.0

mm/min.

EIA-364,TP-29

Total Insertion Force

0.714Kgf (7 N) Max.

Measure the SIM card insertion force at

25 .0mm/min.

EIA-364,TP-13

Total withdrawal Force

when SIM card is mated

0.026Kgf (0.25) N Min.

Measure the mated SIM card extraction force

at

25 .0 mm/min.

EIA-364,TP-13

Card Reverse Insertion

No electrical connection

and Physical damage to

connector.

Maintain push-and-eject

function.

Test speed: 25 mm/ min. Mating device:

Dummy SIM card.

Reference: EIA-364,TP-3

Vibration

(Low Frequency)

No electrical discontinuity

greater than 100 nsec.

Shall occur.

Frequency Range: 10-55-10

Total Amplitude: 1.52 mm pp or 98.1m/s

Duration:

2 hrs tree axes (6 hrs in total)

EIA-364,TP-28

Physical Shock

No electrical discontinuity

greater than 100 nsec.

Shall occur.

Accelerated Velocity: 50G (490s/m^2)

Waveform: Semi Sine Duration: 11m sec.

No of Shocks: 3/dir., 3 axis,(18 in total),

EIA-364,TP-27

Retention to PC board

1.02 kgf (10 N) Mim.

Apply force to connector in un-mating

direction. Reference test procedure: EIA364,

TP-13