MCP16331 datasheet(3/48 Pages) MICROCHIP

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DS20005308D-page 3

MCP16331

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

VIN, SW ............................................................... -0.5V to 54V

BOOST – GND.................................................... -0.5V to 60V

BOOST – SW Voltage........................................ -0.5V to 6.0V

VFB Voltage ........................................................ -0.5V to 6.0V

EN Voltage ............................................. -0.5V to (VIN + 0.3V)

Output Short-Circuit Current ................................. Continuous

Power Dissipation ....................................... Internally Limited

Storage Temperature ....................................-65°C to +150°C

Ambient Temperature with Power Applied ......-40°C to +125°C

Operating Junction Temperature...................-40°C to +160°C

ESD Protection on All Pins:

HBM..................................................................... 4 kV

MM ......................................................................300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the

device at those or any other conditions above those

indicated in the operational sections of this specification

is not intended. Exposure to maximum rating conditions

for extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V, 

VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors.

Boldface specifications apply over the TA range of -40°C to +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Voltage

VIN

4.4

—

Note 1

Feedback Voltage

VFB

0.784

0.800

0.816

Output Voltage Adjust Range

VOUT

2.0

—

Note 1, Note 3

Feedback Voltage



Line Regulation

VFB/VFB)/VIN|

—

0.002

0.1

%/V

VIN = 5V to 50V

Feedback Voltage



Load Regulation

VFB/VFB|

—

0.13

0.35

IOUT = 50 mA to

500 mA

Feedback Input Bias Current

IFB

—

+/- 3

—

Undervoltage Lockout Start

UVLOSTRT

—

4.1

4.4

VIN rising

Undervoltage Lockout Stop

UVLOSTOP

3.6

—

VIN falling

Undervoltage Lockout



Hysteresis

UVLOHYS

—

0.5

—

Switching Frequency

fSW

425

500

550

kHz

Maximum Duty Cycle

DCMAX

—

VIN = 5V; VFB = 0.7V;

IOUT = 100 mA

Minimum Duty Cycle

DCMIN

—

Note 4

NMOS Switch-On Resistance

RDS(ON)

—

0.6

—



VBOOST – VSW = 5V,

Note 3

NMOS Switch Current Limit

IN(MAX)

—

1.3

—

VBOOST – VSW = 5V,

Note 3

Quiescent Current

—

1.7

VIN = 12V; Note 2

Quiescent Current – Shutdown

—

A

VOUT = EN = 0V

Output Current

IOUT

500

—

Note 1; see Figure 2-9

Note 1:

The input voltage should be > output voltage + headroom voltage; higher load currents increase the input

voltage necessary for regulation. See characterization graphs for typical input to output operating voltage

range.

VBOOST supply is derived from VOUT.

Determined by characterization, not production tested.

This is ensured by design.

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