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BU508AF 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BU508AF 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF Fig.1. Test circuit for V CEOsust. Fig.2. Oscilloscope display for V CEOsust. Fig.3. Switching times waveforms. Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. Typical DC current gain. h FE = f (IC) parameter V CE + 50v 100-200R Horizontal Vertical Oscilloscope 1R 6V 30-60 Hz 100R ICsat 90 % 10 % tf ts IBend IC IB t t - IBM VCE / V min VCEOsust IC / mA 100 200 250 0 + 150 v nominal adjust for ICsat 1mH BY228 12nF D.U.T. LB IBend -VBB IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE 0.1 1 10 1 10 100 IC/A h FE BU508AD July 1998 3 Rev 1.200 |
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