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TSML1040 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 TSML1040
상세설명  High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
PDF  10 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSML1040 데이터시트(HTML) 2 Page - Vishay Siliconix

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Document Number 81033
Rev. 1.8, 08-Mar-05
VISHAY
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Reverse Current
VR = 5 V
IR
10
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
25
pF
Radiant Intensity
IF = 20 mA, tp = 20 ms
Ie
37
15
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
φ
e
35
mW
Temp. Coefficient of
φ
e
IF = 20 mA
TK
φ
e
- 0.6
%/K
Angle of Half Intensity
ϕ
±12
deg
Peak Wavelength
IF = 100 mA
λ
p
950
nm
Spectral Bandwidth
IF = 100 mA
∆λ
50
nm
Temp. Coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.2
nm/K
Rise Time
IF = 100 mA
tr
800
ns
Fall Time
IF = 100 mA
tf
800
ns
Virtual Source Diameter
∅
1.2
mm
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
Tamb - Ambient Temperature (
°C)
16187
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
16188
100
90
80
70
60
50
40
30
20
10
0
Tamb - Ambient Temperature (
°C)
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
10
100
1000
10000
0.01
0.10
1.00
10.00
100.00
t p - Pulse Duration ( ms )
14335
tp / T = 0.01
0.05
0.2
0.5
1.0
0.1
0.02
VF - Forward Voltage(V)
13600
10 1
10 0
10 2
10 3
10 4
t p = 100 s
tp/ T = 0.001
µ
4
3
2
1
0



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