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MURL2040CT 데이터시트(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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MURL2040CT 데이터시트(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() Features TO-220AB/TO-220-3L Unit:inch(mm) ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Heatsink open metal TO-220AB/TO-220-3L package ※ Epoxy: UL 94V-0rateflame retardant ※ Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable per MIL-STD-202 method 208 ※ Polarity: As marked on diode body ※ Mounting position: Any ※ Weight: 2.0 gram approximately MURL2020CT thru MURL20120CT Pb Free Plating Product MURL2020CT thru MURL20120CT Pb 20.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers Positive Negative Common Cathode Case Case Common Anode Doubler Case Doubler Polarity Case Series Series Connection Prefix "MURA" Prefix "MURR" Prefix "MURL" Prefix "MUR" .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54) .1(2.54) .387(9.85) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Rev.07T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF (Typical) IR μA μA Trr nS CJ pF RθJC ℃ /W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 100 Typical Thermal Resistance (Note 3) 1.5 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x10.0A=20.0A) 20.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 200 Maximum Instantaneous Forward Voltage @10.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 5.0 500 1.40-1.80 MURL2020CT MURL2040CT MURL2060CT MURL2080CT MURL20100CT MURL20120CT 35-50 50-75 0.90-1.10 1.10-1.40 1.40-1.80 V MURL2030CT |
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