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ESDM3032 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 ESDM3032
상세설명  ESD Protection Diode
PDF  8 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDM3032 데이터시트(HTML) 2 Page - ON Semiconductor

  ESDM3032 Datasheet HTML 1Page - ON Semiconductor ESDM3032 Datasheet HTML 2Page - ON Semiconductor ESDM3032 Datasheet HTML 3Page - ON Semiconductor ESDM3032 Datasheet HTML 4Page - ON Semiconductor ESDM3032 Datasheet HTML 5Page - ON Semiconductor ESDM3032 Datasheet HTML 6Page - ON Semiconductor ESDM3032 Datasheet HTML 7Page - ON Semiconductor ESDM3032 Datasheet HTML 8Page - ON Semiconductor  
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background image
Bi−Directional
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
ESDM3032
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
3.3
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
4.1
5.7
V
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
100
nA
Clamping Voltage TLP
(Note 2)
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(±4 kV Contact, ±8 kV Air)
7.2
V
IPP = 16 A
IEC 61000−4−2 Level 4 equivalent
(±8 kV Contact, ±16 kV Air)
8.5
V
Reverse Peak Pulse Current
IPP
IEC61000−4−5 (8/20 ms)
7.5
8.5
A
Clamping Voltage (8/20 ms)
(Note 3)
VC
IPP = 7.5 A
8.5
9.7
V
Dynamic Resistance
RDYN
100 ns TLP Pulse
0.16
W
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
8.5
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
TYPICAL CHARACTERISTICS
Figure 1. ESD Clamping Voltage − Pin 1 to Pin 2
8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage − Pin 2 to Pin 1
8 kV Contact per IEC61000−4−2
TIME (ns)
−20
−10
0
10
20
30
40
50
−20
0
20
40
60
80
100
120
TIME (ns)
−50
−40
−30
−20
−10
0
10
20
−20
0
20
40
60
80
100
120
140
−30
30
140



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