FDFMA2P029Z, FDFMA2P029Z−F106

www.onsemi.com

3

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = –250 mA, VGS = 0 V

–20

−

−

V

DBVDSS

DTJ

Breakdown Voltage Temperature

Coefficient

ID = –250 mA, referenced to 25°C

−

–12

−

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = –16 V, VGS = 0 V

−

−

–1

mA

IGSS

Gate to Source Leakage Current

VGS = ±12 V, VDS = 0 V

−

−

±10

mA

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = –250 mA

–0.6

–1.0

–1.5

V

DVGS(th)

DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = –250 mA, referenced to 25°C

−

4

−

mV/°C

rDS(on)

Static Drain to Source On−Resistance

VGS = –4.5 V, ID = –3.1 A

−

60

95

mW

VGS = –2.5 V, ID = –2.5 A

−

88

141

VGS = –4.5 V, ID = –3.1 A, TJ = 125°C

−

87

140

gFS

Forward Transconductance

VDS = –10 V, ID = –3.1 A

−

–11

−

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VDS = –10 V, VGS = 0 V, f = 1 MHz

−

540

720

pF

Coss

Output Capacitance

−

120

160

pF

Crss

Reverse Transfer Capacitance

−

100

150

pF

SWITCHING CHARACTERISTICS

td(on)

Turn−On Delay Time

VDD = –10 V, ID = –1 A

VGS = –4.5 V, RGEN = 6 W

−

13

24

ns

tr

Rise Time

−

11

20

ns

td(off)

Turn−Off Delay Time

−

37

59

ns

tf

Fall Time

−

36

58

ns

Qg(TOT)

Total Gate Charge

VDD = –10 V, ID = –3.1 A

VGS = –4.5 V

−

7

10

nC

Qgs

Gate to Source Gate Charge

−

1.1

−

nC

Qgd

Gate to Drain “Miller” Charge

−

2.4

−

nC

DRAIN−SOURCE DIODE CHARACTERISTICS

IS

Maximum Continuous Drain−Source Diode Forward Current

−

−

–1.1

A

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = –1.1 A (Note 3)

−

–0.8

–1.2

V

trr

Reverse Recovery Time

IF = –3.1 A, di/dt = 100 A/ms

−

25

−

ns

Qrr

Reverse Recovery Charge

−

9

−

nC

SCHOTTKY DIODE CHARACTERISTICS

VR

Reverse Voltage

IR = 1 mA

TJ = 25°C

20

−

−

V

IR

Reverse Leakage

VR = 20 V

TJ = 25°C

−

30

300

mA

TJ = 125°C

−

10

45

mA

VF

Forward Voltage

IF = 500 mA

TJ = 25°C

−

0.32

0.37

V

TJ = 125°C

−

0.21

0.26

IF = 1 A

TJ = 25°C

−

0.37

0.435

TJ = 125°C

−

0.28

0.33

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%