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IPW90R120C3 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 IPW90R120C3
상세설명  isc N-Channel MOSFET Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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www.iscsemi.com
2023-8-17
1
isc N-Channel MOSFET Transistor
IPW90R120C3
FEATURES
·Drain Current –ID=36A@ TC=25℃
·Drain Source Voltage- VDSS=900V(Min)
·Static Drain-Source On-Resistance
RDS(on) = 0.12Ω(Max)@VGS= 10V
·100% avalanche tested
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
36
A
IDM
Drain Current-Single Pluse
96
A
PD
Total Dissipation @TC=25℃
417
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.3
℃
/W


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