STTH3002CT datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

Characteristics

STTH3002C

2/11

Characteristics

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(RMS)

RMS forward current

IF(AV)

Average forward current,

δ = 0.5

TO-220AB, TO-247,

I2PAK, D2PAK

Per diode Tc = 150° C

Per device Tc = 145° C

TOP3I

Per diode Tc = 125° C

Per device Tc = 105° C

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

180

Tstg

Storage temperature range

-65 to +175

° C

Maximum operating junction temperature

175

° C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, TO-247, I2PAK, D2PAK

Per diode

1.5

° C/W

Total

1.0

TOP3I

Per diode

3.5

Total

2.3

Rth(c)

Coupling

TO-220AB, TO-247, I2PAK, D2PAK

0.5

TOP3I

1.1

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