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M25P64-VMF6TP 데이터시트(PDF) 42 Page - STMicroelectronics

부품명 M25P64-VMF6TP
상세설명  64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface
PDF  49 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M25P64-VMF6TP 데이터시트(HTML) 42 Page - STMicroelectronics

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DC and AC parameters
M25P64
42/49
1.
tCH + tCL must be greater than or equal to 1/ fC(max)
2.
Value guaranteed by characterization, not 100% tested in production.
3.
Expressed as a slew-rate.
4.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5.
When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one
sequence including all the Bytes versus several sequences of only a few Bytes. (1
≤n ≤256).
6.
VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
known.
Table 14.
AC characteristics
Test conditions specified in Table 10 and Table 11
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, RES, WREN, WRDI, RDID, RDSR, WRSR
D.C.
50
MHz
fR
Clock Frequency for READ instructions
D.C.
20
MHz
tCH
(1)
tCLH Clock High Time
9
ns
tCL
(1)
tCLL Clock Low Time
9
ns
tCLCH
(2)
Clock Rise Time(3) (peak to peak)
0.1
V/ns
tCHCL
(2)
Clock Fall Time(3) (peak to peak)
0.1
V/ns
tSLCH
tCSS S Active Setup Time (relative to C)
5
ns
tCHSL
S Not Active Hold Time (relative to C)
5
ns
tDVCH
tDSU Data In Setup Time
2
ns
tCHDX
tDH Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
tSHSL
tCSH S Deselect Time
100
ns
tSHQZ
(2)
tDIS Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO Output Hold Time
0
ns
tHLCH
HOLD Setup Time (relative to C)
5
ns
tCHHH
HOLD Hold Time (relative to C)
5
ns
tHHCH
HOLD Setup Time (relative to C)
5
ns
tCHHL
HOLD Hold Time (relative to C)
5
ns
tHHQX
(2)
tLZ
HOLD to Output Low-Z
8
ns
tHLQZ
(2)
tHZ
HOLD to Output High-Z
8
ns
tWHSL
(4)
Write Protect Setup Time
20
ns
tSHWL
(4)
Write Protect Hold Time
100
ns
tVPPHSL
(6)
Enhanced Program Supply Voltage High to Chip Select Low
200
ns
tW
Write Status Register Cycle Time
5
15
ms
tPP
(5)
Page Program Cycle Time (256 Bytes)
1.4
5ms
Page Program Cycle Time (n Bytes)
0.4+ n*1/256
Page Program Cycle Time (VPP = VPPH) (256 Bytes)
0.35
ms
tSE
Sector Erase Cycle Time
1
3
s
Sector Erase Cycle Time (VPP = VPPH)0.5
s
tBE
Bulk Erase Cycle Time
68
160
s
Bulk Erase Cycle Time (VPP = VPPH)35
160
s



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