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PMPB48EP

30 V, single P-channel Trench MOSFET

PMPB48EP

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Product data sheet

10 September 2012

4 / 14

017aaa772

-1

-10-1

-10

-102

ID

(A)

-10-2

VDS (V)

-10-2

-102

-10

-10-1

-1

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Limit RDSon = VDS/ID

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

-

235

270

K/W

in free air

[2]

-

67

74

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air; t ≤ 5 s

[2]

-

33

36

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

-

5

10

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.