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B2M065120Z 데이터시트(PDF) 3 Page - BASIC SEMICONDUCTOR |
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B2M065120Z 데이터시트(HTML) 3 Page - BASIC SEMICONDUCTOR |
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3 / 13 page ![]() SiC MOSFET 3 / 13 www.basicsemi.com Thermal Characteritics Symbol Parameter Value Unit Min. Typ. Max. 0.60 K/W Thermal Resistance from Junction to Case R th(jc) AC Characteristics Gate Charge Characteristics Symbol Parameter Test conditions Value Unit Min. Typ. Max. 1300 75 3 1.8 pF pF pF Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance C iss C oss C rss R G(int) V GS=0V, VDS=800V f =1MHz, V AC=25mV f =1MHz, V AC=25mV Symbol Parameter Test conditions Value Unit Min. Typ. Max. 18 30 60 nC nC nC Gate to Source Charge Gate to Drain Charge Total Gate Charge Q GS Q GD Q G V DS=800V I D =20A V GS=-4/+18V Rev. 0.0 B2M065120Z |
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