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SST13LP02-QDF 데이터시트(PDF) 6 Page - Silicon Storage Technology, Inc |
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SST13LP02-QDF 데이터시트(HTML) 6 Page - Silicon Storage Technology, Inc |
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6 / 25 page ![]() Preliminary Specifications 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 ©2006 SST Communications Corp. S71304-01-000 9/06 6 For 802.11b/g Operation TABLE 2: DC Electrical Characteristics Symbol Parameter Min. Typ Max. Unit Test Conditions VCC Supply Voltage 3.0 3.3 3.6 V ICC Supply Current for 802.11g, 22 dBm 220 mA for 802.11b, 21.5 dBm 205 mA ICQ Idle current for 802.11g to meet EVM<4% @ 18 dBm 55 mA IOFF Shut down current 0.1 µA VREG Reference Voltage with drop resistors 2.9 V T2.1 1304 TABLE 3: AC Electrical Characteristics for Configuration Symbol Parameter Min. Typ Max. Unit FL-U Frequency range 2400 2485 MHz G Small signal gain 25 dB GVAR1 Gain variation over band (2400-2485 MHz) ±0.5 dB GVAR2 Gain ripple over channel (20 MHz) 0.2 dB ACPR Output power level meet 11b spectrum mask 21 dBm Output power level meet 11g OFDM 54 Mbps spectrum mask 21 dBm Added EVM Added EVM @ Pout = 19 dBm with (54 Mbps 11g OFDM) 4 % 2f 2nd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM) -45 dBc 3f 3rd Harmonics at Pout=18 dBm (54 Mbps 11g OFDM) -50 dBc ACPR1 Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11g OFDM) -35 dBc ACPR2 Alt. Adjacent Channel Power Rejection at Pout=18 dBm (54 Mbps 11g OFDM) -45 dBc T3.1 1304 |
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