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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IXFK80N50 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFK80N50 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXFK80N50 FEATURES · Drain Current : ID= 80A@ TC=25℃ · Drain Source Voltage : VDSS= 500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation 1040 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.12 ℃ /W |
유사한 부품 번호 - IXFK80N50 |
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유사한 설명 - IXFK80N50 |
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