BD179 datasheet(2/5 Pages) STMICROELECTRONICS

부품명	BD179

상세설명	NPN SILICON TRANSISTOR

PDF	5 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

4.16

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 80 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.1 A

0.8

VBE

∗

Base-Emitter Voltage

IC = 1 A

VCE = 2 V

1.3

hFE

∗

DC Current Gain

IC = 150 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

hFE

hFE Groups

IC = 150 mA

VCE = 2 V

group 16

100

250

Transition Frequency

IC = 250 mA

VCE = 10 V

MHz

* Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

BD179

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