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MJD350 데이터시트(PDF) 2 Page - STMicroelectronics |
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MJD350 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 8.33 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (vBE = 0) VCB = 300 V 0.1 mA IEBO Emitter Cut-off Current (IC = 0) VEB = 3 V 0.1 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 1 mA 300 V hFE ∗ DC Current Gain IC = 50 mA VCE = 10 V 30 240 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curve MJD340 / MJD350 2/5 |
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