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RH40N25FSY1 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 RH40N25FSY1
상세설명  N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RH40N25FSY1 데이터시트(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STRH40N25FSY3
4/13
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
2.1
Pre-irradiation
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current (VGS = 0)
80% BVDss
10
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±16V
±
100
nA
BVDSS
Drain-to-source breakdown
voltage
ID = 1mA, VGS = 0V
250
V
VGS(th)
Gate threshold voltage
VDS =VGS, ID = 1mA
2
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 12V, ID = 20A
0.084
0.1
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 0V, f=1MHz,
VGS=12V
9100
650
45
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 200V, ID = 40A,
VGS=12V
202
34
58
280
47
80
nC
nC
nC
RG
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
1.4
3
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 125V, ID =40 A,
RG = 4.7Ω, VGS = 12V
33
80
123
145
ns
ns
ns
ns



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