RH40N25FSY3 datasheet(3/13 Pages) STMICROELECTRONICS

부품명	RH40N25FSY3

상세설명	N-channel 250V - 0.084ohm - TO-254AA Rad-hard low gate charge STripFET TM Power MOSFET

PDF	13 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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STRH40N25FSY3

Electrical ratings

3/13

Electrical ratings

Table 1.

Absolute maximum ratings (pre-irradiation)

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

250

VGS

Gate-source voltage

±16

(1)

Rated according to the Rthj-case

Drain current (continuous) at TC= 25°C

(1)

Drain current (continuous) at TC= 100°C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

144

PTOT

(1)

Total dissipation at TC= 25°C

278

dv/dt (3)

ISD < 40A, di/dt < 400A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case

0.45

°C/W

Rthc-s

Case-to-sink

0.21

°C/W

Rthj-amb Thermal resistance junction -amb

°C/W

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

320

EAR

Repetitive avalanche

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