2N5088G. datasheet(2/5 Pages) ONSEMI

2 / 5 page

2N5088, 2N5089

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

2N5088

2N5089

V(BR)CEO

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

2N5088

2N5089

V(BR)CBO

−

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

2N5088

(VCB = 15 Vdc, IE = 0)

2N5089

ICBO

−

nAdc

Emitter Cutoff Current

(VEB(off) = 3.0 Vdc, IC = 0)

(VEB(off) = 4.5 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

2N5088

2N5089

hFE

300

400

350

450

300

400

900

1200

−

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

−

0.5

Vdc

Base −Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

VBE(on)

−

0.8

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

−

MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

4.0

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

−

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N5088

2N5089

hfe

350

450

1400

1800

−

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

2N5088

2N5089

−

3.0

2.0

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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