BUL742C datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

BUL742C

2/7

THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)

* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

1.79

62.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE =0)

VCE = 1050 V

100

µA

ICEO

Collector Cut-off

Current (IB =0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC =0)

IE = 1 mA

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 10 mA

400

VCE(sat)*

Collector-Emitter

Saturation Voltage

IC =1A

IC = 3.5 A

IB = 0.2 A

IB =1A

0.5

1.5

VBE(sat)*

Base-Emitter

Saturation Voltage

IC = 3.5 A

IB =1A

1.5

hFE*

DC Current Gain

IC = 0.1 A

IC = 0.8 A

VCE =5 V

VCE =3 V

100

RESISTIVE LOAD

Storage Time

Fall Time

IC =2A

IB1 =-IB2 = 400 mA

VBB(off) =-5 V

VCC = 125 V

tp = 300 µs

(See Figure 1)

2.4

350

µs

Ear

Repetitive Avalanche

Energy

L =2mH

VBE =-5V

C = 1.8 nF

(See Figure 2)

6mJ

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