BUL89_01 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-Case

Max

1.14

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 850 V

Tj = 125

o C

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 1.6 A

IC = 12 A

IB = 2.4 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 1.6 A

1.3

1.6

hFE

∗

DC Current Gain

IC = 5 A

VCE = 5 V

IC = 10 mA

VCE = 5 V

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 8 A

IB1 = 1.6 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 350 V

L = 200

µH

(see figure 1)

1.5

2.3

110

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 8 A

IB1 = 1.6 A

VBE(off) = -5 V

RBB = 0

Ω

VCL = 350 V

L = 200

µH

Tj = 100

(see figure 1)

1.9

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

BUL89

2/6

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