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MD2009DFX 데이터시트(PDF) 1 Page - STMicroelectronics |
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MD2009DFX 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() October 2006 Rev 4 1/10 10 MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package U.L. compliant ■ Integrated free wheeling diode ■ In compliance with the 2002/93/EC European directive Applications ■ Horizontal deflection output for TV Description The MD2009DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Internal schematic diagram 1 2 3 ISOWATT218FX RBE=60Ω typ. www.st.com Order codes Part number Marking Package Packaging MD2009DFX MD2009DFX ISOWATT218FX Tube |
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