ST8812FP datasheet(3/10 Pages) STMICROELECTRONICS

부품명	ST8812FP

상세설명	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	10 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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3 / 10 page

ST8812FP

2 Electrical Characteristics

3/10

Electrical Characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical Characteristics

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1150V

Tc= 125°C

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 14V

1mA

VCEO(sus)

Note: 1

Collector-Emitter

Sustaining Voltage (IB = 0)

IC = 100mA

600

VCE(sat)

Note: 1

Collector-Emitter Saturation Voltage

IC = 4A _____

IB = 0.8A

IC = 4A ___

__ IB = 1.2A

1.5

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage

IC = 4A ____

_ IB = 0.8A

1.3

hFE

DC Current Gain

IC = 1A _____

VCE = 5V

IC = 5A _____

VCE = 1V

IC = 5A _____

VCE = 5V

4.5

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4A ____

_ RBB= 0

VClamp = 480V

VBE(off) = -5V

IB1 = 0.8A

_ LC= 220μH

(See Figure 8)

1.6

120

μs

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