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STC12IE90HV 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STC12IE90HV
상세설명  Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STC12IE90HV 데이터시트(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STC12IE90HV
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS = VGS = 0)
VCE = 900V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0)
VBS(OS) = 30V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17V
100
nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A
IB = 0.6A
1
0.6
V
V
hFE
DC current gain
VGS = 10V_ IC = 12A VCS = 1V
VGS = 10V_ IC = 6A_ VCS = 1V
5
15
VBS(ON) Base Source ON voltage
VGS = 10V_ IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A_ IB = 0.6A
1.5
1.2
V
V
VGS(th)
Gate threshold voltage
VBS = VGS ______IB = 250µA
23
4V
Ciss
Input capacitance
VCS =25V f =1MHz
VGS=0V
520
pF
QGS(tot)
Gate-source Charge
VCS=25V
VGS=10V
VCB=0V
IC =4A
21.3
nC
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =6A
IB =1.2A
610
10
ns
ns
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
VGS =10V
RG =47Ω
VClamp =720V
tp =4µs
IC =6A
IB =0.6A
360
10
ns
ns
VCSW
Maximum collector-
source voltage switched
without snubber
RG =47Ω
hFE =5
IC = 12A
900
V



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