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D17NF 데이터시트(PDF) 3 Page - STMicroelectronics |
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D17NF 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STD17NF03L - STD17NF03L-1 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ± 16 V ID Drain current (continuous) at TC = 25°C 17 A ID Drain current (continuous) at TC = 100°C 12 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 68 A Ptot Total dissipation at TC = 25°C 30 W Derating Factor 0.2 W/°C dv/dt(2) 2. ISD ≤17A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Peak diode recovery avalanche energy 7 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 8.5A, VDD = 15V Single pulse avalanche energy 200 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 5.0 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 275 °C |
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