STF817A datasheet(3/9 Pages) STMICROELECTRONICS

3 / 9 page

STF817A - STN817A

2 Electrical characteristics

3/9

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3.

On/off states

(1) Device mounted on a PCB area of 1 cm²

(2) Pulsed: Pulse duartion = 300µs, duty cycle 1.5%

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IECS

Collector Cut-off Current

(VBE=0)

VCE = -80 V

-500

µA

ICEO

Collector Cut-off Current

(IB=0)

VCE = -80 V

-1

IEBO

Emitter Cut-off Current (IC = 0) VEB = -5V

-100

µA

VCEO(sus)

Note 2

Collector-Emitter Sustaining

Voltage (IB = 0)

IC=-10mA

-80

VCE(sat)

Note 2

Collector-Emitter Saturation

Volatge

IC= -100 mA, IB= -10m A

IC= -1 A, IB= -100m A

-0.25

-0.5

VBE(sat)

Note 2

Base-Emitter Saturation

Volatge

IC= -100 mA, IB= -10m A

IC= -1 A, IB= -100m A

-1

-1.1

hFENote 2

DC Current Gain

IC= -100 mA, VCE = -2V

IC= -500 mA, VCE = -2V

IC= -1A, VCE = -2V

140

Transition Frequency

IC= -0.1A, VCE = -10V

MHz

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