| 전자부품 데이터시트 검색엔진 |
|
STS8DNF3LL 데이터시트(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STS8DNF3LL 데이터시트(HTML) 5 Page - STMicroelectronics |
|
5 / 12 page ![]() STS8DNF3LL Electrical characteristics 5/12 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 8 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 32 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 8A, VGS = 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8A, VDD = 15V di/dt = 100A/µs, Tj = 150°C (see Figure 15) 23 17 1.5 ns nC A |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |