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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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17H3LL- 데이터시트(PDF) 1 Page - STMicroelectronics |
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17H3LL- 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  January 2007 Rev 2 1/12 12 STS17NH3LL N-channel 30V - 0.004 Ω - 17A - SO-8 STripFET™ Power MOSFET for DC-DC conversion General features ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Improved junction-case thermal resistance ■ Low threshold device Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STS17NH3LL 30V <0.0057 Ω 17A(1) 1. This value is rated according to Rthj-pcb SO-8 www.st.com Order codes Part number Marking Package Packaging STS17NH3LL 17H3LL- SO-8 Tape & reel |
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