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100H3LL- 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 100H3LL-
상세설명  N-CHANNEL 30 V - 0.0032 ohm - 25 A PowerSO-8 STripFET III MOSFET FOR DC-DC CONVERSION
PDF  11 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

100H3LL- 데이터시트(HTML) 3 Page - STMicroelectronics

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STSJ100NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
Table 10: Source Drain Diode
Notes
1. This value is noted according to Rthj-pcb
2. This value is noted according to Rthj-c
3. Pulse width limited by safe operating area
4. When Mounted on 1 inch² FR-4 board, 2 oz Cu (t
≤ 10 sec.)
5. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (5)
Forward Transconductance
VDS=10V, ID = 12.5A
30
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
4450
655
50
pF
pF
pF
RG
Gate Input Resistance
f=1MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1
2
3
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15V, ID = 12.5A
RG = 4.7Ω , VGS = 10V
(see Figure 15)
18
50
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=15V, ID=25A
VGS=4.5V
(see Figure 17)
30
12.5
10
40
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15V, ID = 12.5A
RG = 4.7Ω , VGS = 10V
(see Figure 15)
75
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
25
100
A
A
VSD(5)
Forward On Voltage
ISD = 25A ,VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25A, di/dt = 100A/µs
VDD = 25V, Tj = 150°C
(see Figure 16)
32
34
2.1
ns
nC
A



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