| 전자부품 데이터시트 검색엔진 |
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2SA1981 데이터시트(PDF) 2 Page - Nanjing International Group Co |
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2SA1981 데이터시트(HTML) 2 Page - Nanjing International Group Co |
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2 / 4 page ![]() (/(&75,&$/&+$5$&7(5,67,&6 a T =25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.5mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-0.05mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A DC current gain hFE VCE=-1V, IC=-100mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-20mA -0.5 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 19 pF Transition frequency fT VCE=-5V,IC=-10mA 120 MHz CLASSIFICATION OF hFE RANK O Y RANGE 100-200 160-320 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 2/4 |
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