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M25PE40 데이터시트(PDF) 1 Page - STMicroelectronics |
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M25PE40 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 60 page ![]() January 2007 Rev 7 1/59 1 M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features ■ SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) ■ SubSector Erase (4 Kbytes) ■ Sector Erase (64 Kbytes) ■ Bulk Erase (4 Mbits) ■ 2.7 V to 3.6 V single supply voltage ■ 50 MHz clock rate (maximum) ■ Deep Power-down mode 1 µA (typical) ■ Electronic Signature – JEDEC standard two-byte signature (8013h) ■ Software Write Protection on a 64 Kbyte sector basis ■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits ■ More than 100 000 Write cycles ■ More than 20 year data retention ■ Packages – ECOPACK® (RoHS compliant) VFQFPN8 (MP) 6 × 5 mm (MLP8) SO8W (MW) 208 mils width SO8N (MN) 150 mils width www.st.com |
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