| 전자부품 데이터시트 검색엔진 |
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STBV32-AP 데이터시트(PDF) 1 Page - STMicroelectronics |
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STBV32-AP 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() 1/9 April 2005 n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION n VERY HIGH SWITCHING SPEED APPLICATIONS n COMPACT FLUORESCENT LAMPS (CFLS) DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV series is designed for use in Compact Fluorescent Lamps. Figure 1: Package Figure 2: Internal Schematic Diagram Table 1: Order Codes Table 2: Absolute Maximum Ratings TO-92 Part Number Marking Package Packaging STBV32 STBV32-AP BV32 BV32 TO-92 TO-92 Bulk Ammopack Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0, IB = 0.5 A, tp < 10 ms) V(BR)EBO V IC Collector Current (f ≥ 100 Hz, duty-cycle ≤ 50 %, TC = 25 oC) 1.5 A ICM Collector Peak Current (tp < 5ms) 3A IB Base Current 0.5 A IBM Base Peak Current (tp < 5ms) 1.5 A Ptot Total Dissipation at TC = 25 oC 1.5 W STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Rev. 2 |
유사한 부품 번호 - STBV32-AP |
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유사한 설명 - STBV32-AP |
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