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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STS01DTP06 데이터시트(PDF) 5 Page - STMicroelectronics |
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STS01DTP06 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 11 page  STS01DTP06 5/11 2.1 Electrical characteristics (curve) VBE(sat) (1) Base-emitter saturation voltage IC = -1A IB = -10mA -0.85 -1.1 V hFE (1) DC current gain IC = -1A VCE = -2V IC = -3A VCE = -2V 100 30 1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 % Table 4. Q2-PNP transistor electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Figure 1. Reverse biased area Q1 NPN transistor Figure 2. DC current gain Q1 NPN transistor Figure 3. DC current gain Q1 NPN transistor Figure 4. Collector-emitter saturation voltage Q1 NPN transistor |
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