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IPT60R080G7 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 IPT60R080G7
상세설명  isc N-Channel MOSFET Transistor
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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isc N-Channel MOSFET Transistor
IPT60R080G7
www.iscsemi.com
2023-8-29
11
DESCRIPTION
·
Drain Current –ID=29A@ TC=25℃
·
Drain Source Voltage- VDSS= 650V(Min)
APPLICATIONS
·
Synchronous Rectification in SMPS
·
Switching converters,motor driver,relay driver
·
Power Tools
·
UPS
·
Motor Control
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
29
A
IDM
Pulsed drain current
@ TC=25℃
93
A
EAS
Avalanche Energy, Single Pulse ,L=0.4mH, TC=25℃
97
mJ
PD
Power Dissipation ,TC=25℃
167
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.75
℃
/W


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