| 전자부품 데이터시트 검색엔진 |
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2SC1675 데이터시트(PDF) 2 Page - Nanjing International Group Co |
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2SC1675 데이터시트(HTML) 2 Page - Nanjing International Group Co |
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2 / 4 page ![]() (/(&75,&$/&+$5$&7(5,67,&6 a T =25 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE VCE=6V, IC=1mA 40 240 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.3 V Base-emitter voltage VBE VCE=6V, IC=1mA 0.75 V Collector output capacitance Cob VCB=6V,IE=0, f=1MHz 2.5 pF Transition frequency fT VCE=6V,IC=1mA 150 MHz CLASSIFICATION OF hFE RANK R O Y RANGE 40-80 70-140 120-240 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 2/4 |
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