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2SD1616A 데이터시트(PDF) 2 Page - Nanjing International Group Co

부품명 2SD1616A
상세설명  TO-92 Plastic-Encapsulate Transistors
PDF  5 Pages
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제조업체  DGNJDZ [Nanjing International Group Co]
홈페이지  http://www.dgnjdz.com/
Logo DGNJDZ - Nanjing International Group Co

2SD1616A 데이터시트(HTML) 2 Page - Nanjing International Group Co

  2SD1616A Datasheet HTML 1Page - Nanjing International Group Co 2SD1616A Datasheet HTML 2Page - Nanjing International Group Co 2SD1616A Datasheet HTML 3Page - Nanjing International Group Co 2SD1616A Datasheet HTML 4Page - Nanjing International Group Co 2SD1616A Datasheet HTML 5Page - Nanjing International Group Co  
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a
T =25
unless otherwise specified
Pa
rameter
Symbol
Test c onditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 10μA , IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 2mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
hFE1
VCE=2 V, IC= 100mA
135
600
DC current gain
hFE2
VCE=2 V, IC= 1A
81
Collector-emitter saturation voltage *
VCE(sat)
IC= 1A, IB=50mA
0.3
V
Base-emitter saturation voltage *
VBE(sat)
IC= 1A, IB=50mA
1.2
V
Base-emitter voltage *
VBE
VCE= 2V, IC=50mA
0.6
0.7
V
Transition frequency
fT
VCE=2 V, IC= 100mA
100
MHz
Output capacitance
Cob
VCB=10 V,IE= 0, f=1MHz
19
pF
Turn on time
ton
0.07
μs
Storage time
tS
0.95
μs
Fall time
tF
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
0.07
μs
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICA TION OF hFE1
Rank L
K
U
Range
135-270
200-400
300-600
Dongguan Nanjing Electronics Ltd.
www.dgnjdz.com
2/5



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