전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

MMDF2C03HD 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MMDF2C03HD
상세설명  Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2C03HD 데이터시트(HTML) 2 Page - ON Semiconductor

  MMDF2C03HD Datasheet HTML 1Page - ON Semiconductor MMDF2C03HD Datasheet HTML 2Page - ON Semiconductor MMDF2C03HD Datasheet HTML 3Page - ON Semiconductor MMDF2C03HD Datasheet HTML 4Page - ON Semiconductor MMDF2C03HD Datasheet HTML 5Page - ON Semiconductor MMDF2C03HD Datasheet HTML 6Page - ON Semiconductor MMDF2C03HD Datasheet HTML 7Page - ON Semiconductor MMDF2C03HD Datasheet HTML 8Page - ON Semiconductor MMDF2C03HD Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
MMDF2C03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
−
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
−
−
−
−
1.0
1.0
mAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
−
100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
(N)
(P)
1.0
1.0
1.7
1.5
3.0
2.0
Vdc
Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
−
−
0.06
0.17
0.070
0.200
W
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
−
−
0.065
0.225
0.075
0.300
W
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
2.0
2.0
3.6
3.4
−
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
−
−
450
397
630
550
pF
Output Capacitance
Coss
(N)
(P)
−
−
160
189
225
250
Transfer Capacitance
Crss
(N)
(P)
−
−
35
64
70
126
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 W)
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 W)
td(on)
(N)
(P)
−
−
12
16
24
32
ns
Rise Time
tr
(N)
(P)
−
−
65
18
130
36
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
16
63
32
126
Fall Time
tf
(N)
(P)
−
−
19
194
38
390
Turn−On Delay Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc, RG = 9.1 W)
(VDD = 15 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 W)
td(on)
(N)
(P)
−
−
8.0
9.0
16
18
Rise Time
tr
(N)
(P)
−
−
15
10
30
20
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
30
81
60
162
Fall Time
tf
(N)
(P)
−
−
23
192
46
384
Total Gate Charge
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
(N)
(P)
−
−
11.5
14.2
16
19
nC
Gate−Source Charge
Q1
(N)
(P)
−
−
1.5
1.1
−
−
Gate−Drain Charge
Q2
(N)
(P)
−
−
3.5
4.5
−
−
Q3
(N)
(P)
−
−
2.8
3.5
−
−
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.



Html Pages

1 2 3 4 5 6 7 8 9 10


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com