전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

ZXMP6A18K 데이터시트(PDF) 4 Page - Zetex Semiconductors

부품명 ZXMP6A18K
상세설명  60V P-channel enhancement mode MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ZETEX [Zetex Semiconductors]
홈페이지  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZXMP6A18K 데이터시트(HTML) 4 Page - Zetex Semiconductors

  ZXMP6A18K Datasheet HTML 1Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 2Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 3Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 4Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 5Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 6Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 7Page - Zetex Semiconductors ZXMP6A18K Datasheet HTML 8Page - Zetex Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
ZXMP6A18K
Issue 1 - March 2006
4
www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at TA = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V(BR)DSS
-60
V
ID=-250 A, VGS=0V
Zero gate voltage drain current
IDSS
-1.0
µA
VDS=-60V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS =±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
-1.0
V
ID=-250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Width
300µs. Duty cycle
2%.
RDS(on)
0.055
VGS=-10V, ID=-3.5A
0.080
VGS=-4.5V, ID=-2.9A
Forward transconductance (*)(‡)
gfs
8.7
S
VDS=-15V,ID=-3.5A
Dynamic (‡)
Input capacitance
Ciss
1580
pF
VDS=-30 V, VGS=0V,
f=1MHz
Output capacitance
Coss
160
pF
Reverse transfer capacitance
Crss
140
pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time
td(on)
4.6
ns
VDD =-30V, ID=-1A
RG=6.0W,VGS=-10V
Rise time
tr
5.8
ns
Turn-off delay time
td(off)
55
ns
Fall time
tf
23
ns
Gate charge
Qg
23
nC
VDS=-30V,VGS=-5V,
ID=-3.5A
Total gate charge
Qg
44
nC
VDS=-30V,VGS=-10V,
ID=-3.5A
Gate-source charge
Qgs
3.9
nC
Gate-drain charge
Qgd
9.8
nC
Source-drain diode
Diode forward voltage (*)
VSD
-0.85
-0.95
V
TJ=25°C, IS=-4.2A,
VGS=0V
Reverse recovery time (‡)
trr
37
ns
TJ=25°C, IF=-2.1A,
di/dt= 100A/µs
Reverse recovery charge (‡)
Qrr
56
nC



Html Pages

1 2 3 4 5 6 7 8


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com