전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

MMBTA44L-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MMBTA44L-AE3-R
상세설명  HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBTA44L-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  MMBTA44L-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBTA44L-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBTA44L-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBTA44L-AE3-R Datasheet HTML 4Page - Unisonic Technologies MMBTA44L-AE3-R Datasheet HTML 5Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2
www.unisonic.com.tw
QW-R206-007.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
MMBTA44
500
Collector-Base Voltage
MMBTA45
VCBO
400
V
MMBTA44
400
Collector-Emitter Voltage
MMBTA45
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
300
mA
Ta=25
°C
350
mW
Power Dissipation
Tc=25
°C
PD
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
ELECTRICAL CHARACTERISTICS (T
j =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MMBTA44
500
Collector-Base Breakdown
Voltage
MMBTA45
BVCBO
Ic=100
µA, I
B=0
400
V
MMBTA44
400
Collector-Emitter Breakdown
Voltage
MMBTA45
BVCEO
Ic=1mA, IB=0
350
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA, Ic=0
6
V
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=1mA, IB=0.1mA
Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
0.4
0.5
0.75
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=10mA, IB=1mA
0.75
V
MMBTA44
VCB=400V, IE =0
0.1
Collector Cut-off Current
MMBTA45
ICBO
VCB=320V, IE =0
0.1
µA
MMBTA44
VCE =400V, IB=0
0.5
Collector Cut-off Current
MMBTA45
ICES
VCE =320V, IB=0
0.5
µA
Emitter Cut-off Current
IEBO
VEB=4V, Ic=0
0.1
µA
DC Current Gain(Note)
hFE
VCE =10V, Ic=1mA
VCE =10V, Ic=10mA
VCE =10V, Ic=50mA
VCE =10V, Ic=100mA
40
50
45
40
240
Current Gain Bandwidth Product
fT
VCE =20V, Ic=10mA
f=100MHz
50
MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7
pF
Note: Pulse test: PW<300µs, Duty Cycle<2%



Html Pages

1 2 3 4 5


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com