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MMBTA94-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MMBTA94-AE3-R
상세설명  HIGH VOLTAGE TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBTA94-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  MMBTA94-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBTA94-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBTA94-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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MMBTA94
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-008,B
ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation (Ta=25
°C)
PC
350
mW
Collector Current
IC
-300
mA
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=-100
µA,IE=0
-400
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=-1mA,IB=0
-400
V
Collector-Emitter Breakdown Voltage
BVCES
Ic=-100
µA,V
BE=0
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA,Ic=0
-5
V
Collector Cut-off Current
ICBO
VCB=-300V,IE=0
-100
nA
Collector Cut-off Current
ICES
VCB=-400V,VBE=0
-1
µA
Emitter Cut-off Current
IEBO
VEB=-4V,IC=0
100
nA
DC Current Gain (note)
hFE
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-50mA
VCE=-10V,IC=-100mA
60
70
70
40
300
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
-0.20
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA,IB=-1mA
-0.75
V
Output Capacitance
Cob
VCB=-20V,IE=0, f=1MHz
7
pF
Note: Pulse test: PW<300
µs, Duty Cycle<2%



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