| 전자부품 데이터시트 검색엔진 |
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M28S-TA 데이터시트(PDF) 2 Page - Nanjing International Group Co |
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M28S-TA 데이터시트(HTML) 2 Page - Nanjing International Group Co |
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2 / 4 page ![]() (/(&75,&$/&+$5$&7(5,67,&6 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA ,IE=0 40 V Collector-emitter breakdown voltage V(BR) CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V Collector cut-off current ICBO VCB=40V,IE=0 1 A Collector cut-off current ICEO VCE=20V,IB=0 5 A Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A hFE(1) VCE=1V, IC=1mA 290 hFE(2) VCE=1V, IC=100mA 300 1000 hFE(3) VCE=10V, IC=300mA 300 DC current gain hFE(4) VCE=1V, IC=500mA 300 Collector-emitter saturation voltage VCE(sat) IC=600mA,IB=20mA 0.55 V Transition frequency fT VCE=10V,IE=50mA ,f=30MHz 100 MHz CLASSIFICATION OF hFE(2) RANK B C D RANGE 300-550 500-700 650-1000 a T =25 unless otherwise specified Dongguan Nanjing Electronics Ltd. www.dgnjdz.com 2/4 |
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