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2SA1020L-Y-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SA1020L-Y-AB3-R
상세설명  SILICON PNP EPITAXIAL TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SA1020L-Y-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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2SA1020
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R211-007,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Ic
-2
A
TO-92NL
900
mW
Collector Power Dissipation
SOT-89
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector to Emitter Breakdown Voltage
BVCEO
Ic=-10mA, IB=0
-50
V
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-1.0
µA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-1.0
µA
DC Current Gain
hFE1
hFE2
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
70
40
240
Collector to Emitter Saturation Voltage
VCE(SAT)
Ic=-1A, IB=-0.05A
-0.5
V
Base to Emitter Saturation Voltage
VBE(SAT)
Ic=-1A, IB=-0.05A
-1.2
V
Transition Frequency
fT
VCE=-2V, Ic=-0.5A
100
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
40
pF
Turn-on Time
tON
0.1
µs
Storage Time
tSTG
1.0
µs
Switching Time
Fall Time
tF
0.1
µs
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70 - 140
120 - 240



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