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2SC3835 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2SC3835 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UTC2SC3835 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R214-002,A 00.5 1.0 1.1 0 1 2 3 4 5 6 7 IC-VBE Temperature Base-Emittor Voltage, VBE (V) 0 10 20 30 -0.01 -0.05-0.1 -0.5 -1 fT–IE Emitter Current, IE (A) VCE=12V -5 0.02 0.1 0.5 1 5 20 50 100 200 HFE-Ic Collector Current Ic (A) Typ 7 VCE=4V 1 10 100 1000 0.4 0.5 1 5 θ j-a–t Time, t (ms) 2000 20 50 100 300 0.01 0.05 0.1 1 0.5 5 HFE-Ic Temperature Collector Current Ic (A) 7 VCE=4V 125℃ 25℃ -30℃ |
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