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2SC5353 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SC5353
상세설명  HIGH VOLTAGE NPN TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC5353 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SC5353 Datasheet HTML 1Page - Unisonic Technologies 2SC5353 Datasheet HTML 2Page - Unisonic Technologies 2SC5353 Datasheet HTML 3Page - Unisonic Technologies 2SC5353 Datasheet HTML 4Page - Unisonic Technologies  
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2SC5353
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-031,A
ABSOLUTE MAXIMUM RATING (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900
V
Collector-Emitter Voltage
VCEO
800
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
3
Collector Current
Pulse
ICP
5
A
Base Current
IB
1
A
Ta = 25℃
2.0
Collector Power Dissipation
TC = 25℃
PD
25
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=1 mA, IE = 0
900
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10 mA, IB = 0
800
V
Collector Cut-off Current
ICBO
VCB=720V, IE= 0
100
µA
Emitter Cut-off Current
IEBO
VEB=7V, IC= 0
10
µA
hFE(1)
VCE=5 V, IC=1 mA
10
DC Current Gain
hFE(2)
VCE=5 V, IC=0.15 A
15
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1.2 A, IB=0.45 A
1.0
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=1.2 A, IB=0.24 A
1.3
V
Rise time
tR
0.7
Storage time
tSTG
4.0
Switching time
Fall time
tF
20µS
Input
IB2
IB1
IC
Output
VCC≈360V
IB1 = 0.24 A, IB2 = −0.48 A,
duty cycle ≤ 1%
0.5
µS



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