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DTC143T-AL3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 DTC143T-AL3-R
상세설명  NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC143T-AL3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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DTC143T
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-059,D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
SOT-523
150
mW
Collector Power Dissipation
SOT-23/SOT-323
PC
200
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC =50µA
50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE =50µA
5
V
Collector Cut-off Current
ICBO
VCB=50V
0.5
µA
Emitter Cut-off Current
IEBO
VEB =4V
0.5
µA
Collector-Emitter Saturation Voltage
VCE(SAT) IC =5mA, IB=0.25mA
0.3
V
DC Current Gain
hFE
VCE=5V, IC=1mA
100
250
600
Input Resistance
R1
3.29
4.7
6.11
kΩ
Transition Frequency
fT
VCE =10V, IE =5mA, f=100MHz *
250
MHz
* Transition frequency of the device.



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