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2SD882SL-E-AA3-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2SD882SL-E-AA3-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2SD882S NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R208-007,C TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter voltage (V) 04 8 12 16 20 0 0.4 0.8 1.2 1.6 Case Temperature, TC (℃) Derating Curve of Safe Operating Areas 200 150 100 50 0 -50 0 50 100 150 S/b lim ite d IB=9mA IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA Current Gain-Bandwidth Product Collector-Emitter Voltage Safe Operating Area IC(max), Pulse 10m S 1m S Collector Current, Ic (A) 10 3 10 2 10 1 10 0 10 -2 10 -1 10 0 10 1 10 1 10 0 10 -1 10 -2 10 0 10 1 10 2 IC(max), DC VCE=5V IB=8mA DC Current Gain Collector Current, IC (mA) Collector Current, IC (mA) Saturation Voltage 10 3 10 2 10 1 10 0 10 0 10 1 10 3 10 4 VCE=2V 10 4 10 3 10 2 10 0 10 1 10 2 10 4 10 1 10 0 10 3 VBE(SAT) VCE(SAT) |
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