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N5027-R-TF3-E-T 데이터시트(PDF) 2 Page - Unisonic Technologies |
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N5027-R-TF3-E-T 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() N5027 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R203-032,A ABSOLUTE MAXIMUM RATINGS (Tc = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 850 V Collector-Emitter Voltage VCEO 800 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A Peak Collector Consume Dissipation PC 50 W Peak Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T C= 25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 850 V Collector-Emitter Breakdown Voltage BVCEO IC=5mA, IB=0 800 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 V Collector-Emitter sustaining Voltage VCEX(SUS) IC=1.5A, IB1= -IB2=0.3A L=2mH, Clamped 800 V Collector Cut-off Current ICBO VCB=800V, IE=0 10 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 10 μA hFE 1 VCE=5V, IC=0.2A 10 40 DC Current Gain hFE 2 VCE=5V, IC=1A 6 Collector-Emitter Saturation Voltage VCE (SAT) IC=1A, IB=0.3A 1.1 V Base-Emitter Saturation Voltage VBE (SAT) IC=1.5A, IB=0.3A 1.5 V Output Capacitance Cob VCB=10V, f=1MHz, IE=0 60 pF Current Gain Bandwidth Product fT VCE=10V, IC=0.2A 15 MHz Turn ON Time tON 0.5 μs Storage Time tSTG 3 μs Fall Time tF VCC=400V IC=5IB1= -2.5IB2=2A RL=200Ω 0.3 μs CLASSIFICATION of hFE1 RANK N R O RANGE 10 ~ 20 15 ~ 30 20 ~ 40 |
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